High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors
نویسندگان
چکیده
منابع مشابه
High-Performance Field-Effect-Transistors on Monolayer WSe2
Monolayer Tungsten Diselenide (WSe2) exhibits tremendous advantages as a channel material for next-generation field-effecttransistors (FETs). This paper reviews the relevant physics and properties of WSe2 and highlights the excellent scalability of monolayer WSe2 for ultra-short channel (sub-5 nm) FETs. The crucial role of metal-WSe2 contacts in determining the performance of monolayer WSe2 FET...
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ژورنال
عنوان ژورنال: ACS Nano
سال: 2015
ISSN: 1936-0851,1936-086X
DOI: 10.1021/acsnano.5b04611